Organic gate TFT-type stress sensors and method of making and using the same

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United States of America

PATENT NO 12144259
APP PUB NO 20230371388A1
SERIAL NO

18360894

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Abstract

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A thin-film transistor includes a flexible substrate, an amorphous semiconductor channel layer on the flexible substrate, an organic material piezoelectric stress gate layer adjacent to the amorphous semiconductor channel layer, a gate electrode adjacent to the organic material piezoelectric stress gate layer, and a source electrode and drain electrode coupled to the organic material piezoelectric stress gate layer.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITEDNO 8 LI-HSIN ROAD 6 HSIN-CHU SCIENCE PARK HSIN-CHU 300-77

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Hai-Ching Hsinchu, TW 224 979
Huang, Yen-Chieh Hsinchu, TW 78 162

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