Heterojunction bipolar transistor and manufacturing method of the same

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12142672
APP PUB NO 20220208998A1
SERIAL NO

17612463

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Abstract

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An emitter contact layer, an emitter layer, a base layer, a p-type base layer, a collector layer, and a sub-collector layer are crystal-grown over a first substrate in this order with the main surface as the Group III polar surface. The emitter contact layer includes a nitride semiconductor that is made n-type at a relatively high concentration. The emitter layer includes a nitride semiconductor having a bandgap larger than that of the nitride semiconductor constituting the emitter contact layer. The base layer includes an undoped nitride semiconductor having a bandgap smaller than that of the nitride semiconductor constituting the emitter layer. The p-type base layer includes the same nitride semiconductor as the base layer and made p-type.

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Patent Owner(s)

Patent OwnerAddress
NIPPON TELEGRAPH AND TELEPHONE CORPORATION5-1 OTEMACHI 1-CHOME CHIYODA-KU TOKYO 1008116 ?1008116

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hoshi, Takuya Tokyo, JP 12 9
Ida, Minoru Tokyo, JP 6 22
Matsuzaki, Hideaki Tokyo, JP 34 80
Shiratori, Yuta Tokyo, JP 14 5
Sugiyama, Hiroki Tokyo, JP 98 665
Yoshiya, Yuki Tokyo, JP 8 4

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