Nitride semiconductor device
Number of patents in Portfolio can not be more than 2000
United States of America
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Nov 12, 2024
Grant Date -
Jul 6, 2023
app pub date -
Mar 3, 2023
filing date -
Mar 3, 2023
priority date (Note) -
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status (Latency Note)
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Abstract
A nitride semiconductor device includes a substrate, a drift layer and a block layer sequentially provided above the substrate, a gate opening penetrating through a block layer and reaching a drift layer, an electron transit layer and an electron supply layer sequentially provided above the block layer and along the inner surface of the gate opening, a gate electrode provided to cover the gate opening, a source opening penetrating through an electron supply layer and an electron transit layer and reaching the block layer, a source electrode provided in the source opening, and a drain electrode on the rear surface side of the substrate. Seen in a plan view, at least part of an outline of an end of the gate opening in the longitudinal direction follows an arc or an elliptical arc.
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