Material structure for low thermal resistance silicon-based gallium nitride microwave and millimeter-wave devices and manufacturing method thereof

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United States of America

PATENT NO 12142643
APP PUB NO 20220310796A1
SERIAL NO

17282190

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A material structure for silicon-based gallium nitride microwave and millimeter-wave devices and a manufacturing method thereof are provided. The material structure includes: a silicon substrate; a dielectric layer of high thermal conductivity, disposed on an upper surface of the silicon substrate, and an uneven first patterned interface being formed between the dielectric layer and the silicon substrate; a buffer layer, disposed on an upper surface of the dielectric layer, and an uneven second patterned interface being formed between the buffer layer and the dielectric layer; a channel layer, disposed on an upper surface of the buffer layer; and a composite barrier layer, disposed on an upper surface of the channel layer. In the material structure, the uneven patterned interfaces increase contact areas of the interfaces, a thermal boundary resistance and a thermal resistance of device are reduced, and a heat dissipation performance of device is improved.

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  • XIDIAN UNIVERSITY

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hao, Lu Xi'an, CN 3 0
Hao, Yue Xi'an, CN 15 12
Liu, Junwei Xi'an, CN 43 112
Liu, Zhihong Xi'an, CN 116 505
Song, Kunlu Xi'an, CN 2 0
Zhang, Jincheng Xi'an, CN 11 24
Zhang, Weihang Xi'an, CN 4 0
Zhang, Yachao Xi'an, CN 5 1

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