Conductive bond structure to increase membrane sensitivity in MEMS device

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United States of America

PATENT NO 12139399
APP PUB NO 20220219973A1
SERIAL NO

17706863

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Abstract

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Various embodiments of the present disclosure are directed towards a method for forming an integrated chip, where the method includes forming an interconnect structure over a first substrate. A dielectric structure is formed over the interconnect structure. The dielectric structure comprises opposing sidewalls defining an opening. A conductive bonding structure is formed on a second substrate. A bonding process is performed to bond the conductive bonding structure to the interconnect structure. The conductive bonding structure is disposed in the opening. The bonding process defines a first cavity between inner opposing sidewalls of the conductive bonding structure and a second cavity between the conducive bonding structure and the opposing sidewalls of the dielectric structure.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTDHSINCHU

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hsieh, Yuan-Chih Hsinchu, TW 102 1115
Huang, Xin-Hua Xihu Township, TW 73 1348
Hung, Chia-Ming Taipei, TW 44 376
Lin, Hung-Hua Taipei, TW 51 387

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