Semiconductor device and power conversion device

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12136665
APP PUB NO 20230155015A1
SERIAL NO

17933745

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Abstract

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Provided is a semiconductor device that carries current in both directions and that enables accurate detection of current flowing through the semiconductor device. The semiconductor device includes a transistor and a diode both formed in a common semiconductor base body. The semiconductor device includes: a first main surface; a second main surface; a first electrode; a second electrode; a third electrode for current sensing; and a fourth electrode for current sensing. The semiconductor base body includes: a transistor region in which the transistor is formed; a diode region in which the diode is formed; and a separation region formed between the transistor region and the diode region. The third electrode is provided on the first main surface in the transistor region at a distance from the first electrode. The fourth electrode is provided on the first main surface in the diode region at a distance from the first electrode.

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Patent Owner(s)

Patent OwnerAddress
MITSUBISHI ELECTRIC CORPORATION7-3 MARUNOUCHI 2-CHOME CHIYODA-KU TOKYO 1008310 ?1008310

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Sato, Katsumi Tokyo, JP 62 573

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