Silicon carbide wafer and semiconductor device applied the same

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United States of America

PATENT NO 12136653
APP PUB NO 20220320296A1
SERIAL NO

17692528

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Abstract

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In a silicon carbide wafer in an embodiment, in the photoluminescence signal intensity spectrum obtained after irradiating a laser on one surface of the silicon carbide wafer, the number of peak signals having an intensity more than 1.2 times the average signal intensity of the spectrum is 1/cm2 or less.

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SENIC INCCHUNGCHEONGNAM-DO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Choi, Jung Woo Cheonam-si, KR 66 197
Kim, Jung-Gyu Cheonam-si, KR 35 40
Ku, Kap-Ryeol Cheonam-si, KR 28 20
Park, Jong Hwi Cheonam-si, KR 47 37
Seo, Jung Doo Cheonam-si, KR 14 2

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