Semiconductor device and method of manufacture

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12136566
APP PUB NO 20230041753A1
SERIAL NO

17969396

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Abstract

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Semiconductor devices and methods of manufacture are described herein. A method includes forming an opening through an interlayer dielectric (ILD) layer to expose a contact etch stop layer (CESL) disposed over a conductive feature in a metallization layer. The opening is formed using photo sensitive materials, lithographic techniques, and a dry etch process that stops on the CESL. Once the CESL is exposed, a CESL breakthrough process is performed to extend the opening through the CESL and expose the conductive feature. The CESL breakthrough process is a flexible process with a high selectivity of the CESL to ILD layer. Once the CESL breakthrough process has been performed, a conductive fill material may be deposited to fill or overfill the opening and is then planarized with the ILD layer to form a contact plug over the conductive feature in an intermediate step of forming a semiconductor device.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING CO LTDNO 8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 30078

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Chia-Cheng Hsinchu, TW 140 822
Chen, Liang-Yin Hsinchu, TW 145 512
Chiu, U-Ting Hsinchu, TW 16 7
Huang, Kuo-Bin Jhubei, TW 88 144
Lin, Chun-Neng Hsinchu, TW 51 24
Wang, Yu-Shih Tainan, TW 50 71
Yeh, Ming-Hsi Hsinchu, TW 153 567
Yeh, Po-Nan Hsinchu, TW 15 10

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