Pumping capacitor and semiconductor memory device including the same
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United States of America
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Oct 29, 2024
Grant Date -
Mar 2, 2023
app pub date -
Mar 1, 2022
filing date -
Mar 1, 2022
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Abstract
A pumping capacitor is provided. The pumping capacitor includes: first, second, third and fourth electrodes that are separately formed on a substrate; a first pumping capacitor group, wherein i first cell capacitors have lower electrodes formed on the first pad electrode and upper electrodes connected to a plate electrode, and (n−i) first cell capacitors have lower electrodes formed on the second pad electrode and upper electrodes connected to the plate electrode; and a second pumping capacitor group, wherein i second cell capacitors have lower electrodes formed on the fourth pad electrode and upper electrodes connected to the plate electrode, and (n−i) second cell capacitors have lower electrodes formed on the third pad electrode and upper electrodes connected to the plate electrode. The first pumping capacitor group and the second pumping capacitor group are connected in series, and the second pad electrode and the third pad electrode are floated.
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