Bonded semiconductor structures
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United States of America
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Oct 29, 2024
Grant Date -
Sep 1, 2022
app pub date -
May 16, 2022
filing date -
May 16, 2022
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Abstract
A method is provided that includes operations as follows: bonding an epitaxial layer formed with a first semiconductor substrate and an ion-implanted layer that is formed between the epitaxial layer and the first semiconductor substrate, to a bonding oxide layer of a second semiconductor substrate; separating the first semiconductor substrate from the epitaxial layer, by removing the first semiconductor substrate together with a portion of the ion-implanted layer and keeping the epitaxial layer; and forming a first semiconductor device portion on the epitaxial layer, and an interconnect layer on the first semiconductor device portion.
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