Integrated circuit structure

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United States of America Patent

PATENT NO 12127489
APP PUB NO 20230210028A1
SERIAL NO

18170947

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Abstract

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An IC structure comprises a substrate, a first dielectric structure, a second dielectric structure, a first via structure, and a memory cell structure. The substrate comprises a memory region and a logic region. The first dielectric structure is over the memory region. The second dielectric structure laterally extends from the first dielectric structure to over the logic region. The second dielectric structure has a thickness less than a thickness of the first dielectric structure. The first via structure extends through the first dielectric structure. A top segment of the first via structure is higher than a top surface of the first dielectric structure. The first memory cell structure is over the first via structure.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING CO LTDHSINCHU

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Dai, Pin-Ren Hsinchu County, TW 50 189
Lee, Chien-Min Hsinchu County, TW 210 1319
Lin, Chung-Te Tainan, TW 395 1052
Peng, Tai-Yen Hsinchu, TW 66 314
Shieh, Jyu-Horng Hsinchu, TW 138 1171
Tsai, Han-Ting Kaohsiung, TW 82 398
Wei, Hui-Hsien Taoyuan, TW 46 133
Wen, Wei-Chih Hsinchu County, TW 38 138

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