Semiconductor device and method for fabricating the same

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United States of America Patent

PATENT NO 12125890
APP PUB NO 20230369442A1
SERIAL NO

18226264

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Abstract

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A method for fabricating semiconductor device includes the steps of first providing a substrate having a first region and a second region, forming a first bottom barrier metal (BBM) layer on the first region and the second region, forming a first work function metal (WFM) layer on the first BBM layer on the first region and the second region, and then forming a diffusion barrier layer on the first WFM layer.

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Patent Owner(s)

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UNITED MICROELECTRONICS CORPNO 3 LI-HSIN ROAD 2 SCIENCE-BASED INDUSTRIAL PARK HSIN-CHU CITY

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Ti-Bin Tainan, TW 22 18
Chou, Shih-Min Tainan, TW 23 32
Ho, Nien-Ting Tainan, TW 44 293
Huang, Wen-Yen Changhua County, TW 55 61
Li, Yi-Fan Tainan, TW 33 23
Wu, Chih-Chiang Tainan, TW 54 373
Wu, Zhen Kaohsiung, TW 70 365

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