Magnetoresistance memory device
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United States of America Patent
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Oct 22, 2024
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N/A
app pub date -
Jul 30, 2021
filing date -
Dec 17, 2020
priority date (Note) -
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Abstract
In general, according to one embodiment, a magnetoresistance memory device includes: a first ferromagnetic layer; an insulating layer above the first ferromagnetic layer; a second ferromagnetic layer above the insulating layer; a third ferromagnetic layer above the second ferromagnetic layer; and a fourth ferromagnetic layer above the third ferromagnetic layer. The third ferromagnetic layer includes an oxide of an alloy including iron. The fourth ferromagnetic layer includes iron and a 5d transition metal.
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