Substrate processing and membrane release of transversely-excited film bulk acoustic resonator using a sacrificial tub
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United States of America Patent
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Oct 15, 2024
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app pub date -
Dec 10, 2021
filing date -
Jun 15, 2018
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Abstract
An acoustic resonator device is formed using a sacrificial layer and a front side etched cavity by forming a recess in a silicon substrate with a trap-rich top layer and filling the recess with sacrificial silicon nitride. A bonding oxide (BOX) layer is formed over the trap-rich layer and the sacrificial silicon nitride filled recess and a piezoelectric plate is bonded to the BOX layer. The sacrificial silicon nitride is then removed to form a cavity by using an etchant introduced through holes in the piezoelectric plate and BOX layer without removing the BOX layer from over the cavity.
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