Method for manufacturing semiconductor structure
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United States of America Patent
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Oct 15, 2024
Grant Date -
May 18, 2023
app pub date -
Jan 6, 2023
filing date -
Apr 24, 2015
priority date (Note) -
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Abstract
A method includes forming patterned masks over a semiconductor substrate; etching the semiconductor substrate using the patterned masks as an etch mask to form semiconductor fins with a trench between the semiconductor fins; performing an annealing process using a hydrogen containing gas to smooth surfaces of the semiconductor fins; after performing the annealing process, selectively forming a first liner on the smoothed surfaces of the semiconductor fins, while leaving surfaces of the patterned masks exposed by the first liner; filling the trench with a dielectric material; and etching back the first liner and the dielectric material to form an isolation structure between the semiconductor fins.
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