High voltage stacked transistor amplifier
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United States of America Patent
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Oct 8, 2024
Grant Date -
Oct 6, 2022
app pub date -
Mar 31, 2021
filing date -
Mar 31, 2021
priority date (Note) -
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Abstract
Various aspects of integrated amplifiers, layouts for the integrated amplifiers, and packaged arrangements of the amplifiers are described. In one example, an amplifier includes an amplifier cell, and a biasing network coupled to the common gate transistor in the amplifier cell. The amplifier cell includes a common source transistor and a common gate transistor in a cascode arrangement, where at least one of the common source transistor and the common gate transistor comprises a field plate. Among other advantages, the amplifiers described herein can be biased with relatively high voltages and still operate like a single a common source transistor, without sacrificing reliability, performance, or requiring additional off-chip components, such as biasing networks of resistors and inductors.
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