Semiconductor devices with single-photon avalanche diodes and light scattering structures

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United States of America Patent

PATENT NO 12113138
APP PUB NO 20230253513A1
SERIAL NO

18194714

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An imaging device may include single-photon avalanche diodes (SPADs). To improve the sensitivity and signal-to-noise ratio of the SPADs, light scattering structures may be formed in the semiconductor substrate to increase the path length of incident light through the semiconductor substrate. The light scattering structures may include a low-index material formed in trenches in the semiconductor substrate. One or more microlenses may focus light onto the semiconductor substrate. Areas of the semiconductor substrate that receive more light from the microlenses may have a higher density of light scattering structures to optimize light scattering while mitigating dark current.

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Patent OwnerAddress
SEMICONDUCTOR COMPONENTS INDUSTRIES LLC5701 N PIMA ROAD ATTN IP LEGAL DEPT SCOTTSDALE AS 85250

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Borthakur, Swarnal Boise, US 105 869
Perkins, Andrew Eugene Boise, US 9 65
Sulfridge, Marc Allen Boise, US 31 88

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