Image sensor with shallow trench edge doping
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United States of America Patent
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Oct 8, 2024
Grant Date -
Nov 9, 2023
app pub date -
Jun 28, 2023
filing date -
Oct 31, 2017
priority date (Note) -
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Abstract
The present disclosure relates to an integrated chip. The integrated chip includes a gate structure on a substrate. A doped region is within the substrate. One or more dielectric materials are within a recess formed by one or more surfaces of the substrate. The doped region is laterally between the gate structure and the recess. A doped epitaxial material is within the recess and between the one or more dielectric materials and the doped region. The doped epitaxial material is asymmetric about a vertical line that extends through a lateral center of the doped epitaxial material.
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