Memory device having variable impedance memory cells and time-to-transition sensing of data stored therein
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United States of America Patent
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Oct 8, 2024
Grant Date -
Aug 10, 2023
app pub date -
Apr 8, 2023
filing date -
Oct 17, 2017
priority date (Note) -
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Abstract
The present disclosure relates to circuits, systems, and methods of operation for a memory device. In an example, a memory device includes a plurality of memory cells, each memory cell having a variable impedance that varies in accordance with a respective data value stored therein; and a read circuit configured to read the data value stored within a selected memory cell based upon a variable time delay determination of a signal node voltage change corresponding to the variable impedance of the selected memory cell.
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