Memory device and method of forming the same

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United States of America Patent

PATENT NO 12108605
APP PUB NO 20240064994A1
SERIAL NO

17891152

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Abstract

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A memory device includes a plurality of first conductive pillars, a plurality of second conductive pillars, a plurality of gap filling pillars, a channel layer and first dielectric pillars. The gap filling pillars are located in between the first conductive pillars and the second conductive pillars. The channel layer is extending in a first direction, and located on side surfaces of the first conductive pillars and the second conductive pillars. The first dielectric pillars are located in between the channel layer and the plurality of gap filling pillars, wherein a length of an interface where the first dielectric pillars contact the gap filling pillars along the first direction is different from a length of the gap filling pillars along the first direction.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Chieh-Fang Hsinchu County, TW 34 582
Lin, Chung-Te Tainan, TW 395 1052
Yang, Feng-Cheng Hsinchu County, TW 256 877

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