Importance of architectural asymmetry for improved triboelectric nanogenerators with 3D spacer fabrics

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United States of America Patent

PATENT NO 12107517
APP PUB NO 20230216433A1
SERIAL NO

18092155

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Abstract

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The importance of architectural asymmetry is investigated to improve the output voltage of TENGs with polyester/spandex blend three-dimensional (3D) spacer fabrics. Different types of TENGs are fabricated by stacking the 3D spacer fabrics, polydimethylsiloxane (PDMS) films, and electrodes with different stack configurations. The 3D spacer fabric TENGs fabricated with higher architectural asymmetry show higher output voltages than those fabricated with lower architectural asymmetry. In particular, the TENG with the PDMS/fabric/fabric configuration shows the highest peak-to-peak output voltage among all types. An increase in the TENG output voltage is attributed to the relatively high architectural asymmetry in the device configuration and the relatively high effective density of triboelectric charge.

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Patent Owner(s)

Patent OwnerAddress
UNIVERSITY OF SEOUL INDUSTRY COOPERATION FOUNDATIONSEOUL 02504

International Classification(s)

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  • 2022 Application Filing Year
  • H02N Class
  • 269 Applications Filed
  • 99 Patents Issued To-Date
  • 36.81 % Issued To-Date
Click to zoom InYear of Issuance% of Matters IssuedCumulative IssuancesYearly Issuances20222023202420250255075100

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kim, Hyeok Seoul, KR 16 10

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Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges4102701 - 100255075100125150175200225250275300325350375400425450

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