Transistor channel passivation with 2D crystalline material

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United States of America

PATENT NO 12107170
SERIAL NO

17517583

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Abstract

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Transistor structures with a channel semiconductor material that is passivated with two-dimensional (2D) crystalline material. The 2D material may comprise a semiconductor having a bandgap offset from a band of the channel semiconductor. The 2D material may be a thin as a few monolayers and have good temperature stability. The 2D material may be a conversion product of a sacrificial precursor material, or of a portion of the channel semiconductor material. The 2D material may comprise one or more metal and a chalcogen. The channel material may be a metal oxide semiconductor suitable for low temperature processing (e.g., IGZO), and the 2D material may also be compatible with low temperature processing (e.g., <450° C.). The 2D material may be a chalcogenide of a metal present in the channel material (e.g., ZnSx or ZnSex) or of a metal absent from the channel material when formed from a sacrificial precursor.

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Patent Owner(s)

Patent OwnerAddress
INTEL CORPORATIONSANTA CLARA CA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Alaan, Urusa Hillsboro, US 28 68
Jezewski, Christopher Portland, US 29 147
Kobrinsky, Mauro Portland, US 36 139
Naylor, Carl Portland, US 32 66
Sharma, Abhishek Hillsboro, US 297 2115
Weber, Justin Portland, US 14 49

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