Power device and manufacturing method thereof
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United States of America Patent
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Oct 1, 2024
Grant Date -
Nov 24, 2022
app pub date -
Apr 21, 2022
filing date -
Apr 21, 2022
priority date (Note) -
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Abstract
A power device includes: a semiconductor layer, a well region, a body region, a gate, a sub-gate, a source, a drain, and an electric field adjustment region. The sub-gate is formed above a top surface of the semiconductor layer, wherein a portion of the well region is located vertically beneath the sub-gate. The sub-gate is not directly connected to the gate. The electric field adjustment region has a conductivity type which is opposite to that of the well region. The electric field adjustment region is formed beneath and not in contact with the top surface of the semiconductor layer. The electric field adjustment region is located in the well region of the semiconductor layer, and at least a portion of the electric field adjustment region is located vertically beneath the sub-gate.
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