High electron mobility transistor and method for fabricating the same
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United States of America Patent
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Oct 1, 2024
Grant Date -
Nov 9, 2023
app pub date -
Jul 18, 2023
filing date -
Oct 30, 2019
priority date (Note) -
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Abstract
A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a barrier layer on the buffer layer; forming a hard mask on the barrier layer; removing the hard mask to form a first recess for exposing the barrier layer; removing the hard mask adjacent to the first recess to form a second recess; and forming a p-type semiconductor layer in the first recess and the second recess.
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