Semiconductor device and method for fabricating the same
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United States of America Patent
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Oct 1, 2024
Grant Date -
Oct 12, 2023
app pub date -
Jun 13, 2023
filing date -
Jun 5, 2019
priority date (Note) -
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Abstract
A semiconductor device includes a gate structure on a substrate, a first spacer on sidewalls of gate structure, a second spacer on sidewalls of the first spacer, a polymer block adjacent to the first spacer and on a corner between the gate structure and the substrate, an interfacial layer under the polymer block, and a source/drain region adjacent to two sides of the first spacer. Preferably, the polymer block is surrounded by the first spacer, the interfacial layer, and the second spacer.
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