Bipolar transistors
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United States of America Patent
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Oct 1, 2024
Grant Date -
Jun 22, 2023
app pub date -
Dec 22, 2021
filing date -
Dec 22, 2021
priority date (Note) -
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Abstract
The present disclosure relates to semiconductor structures and, more particularly, to bipolar transistors and methods of manufacture. The structure includes: an intrinsic base region; an emitter region above the intrinsic base region; a collector region under the intrinsic base region; and an extrinsic base region comprising metal material, and which surrounds the intrinsic base region and the emitter region.
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