Semiconductor device and method for fabricating the same

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United States of America

PATENT NO 12102014
SERIAL NO

18376437

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Abstract

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A semiconductor device includes a substrate comprising a MTJ region and a logic region, a magnetic tunneling junction (MTJ) on the MTJ region, and a contact plug on the logic region. Preferably, the MTJ includes a bottom electrode layer having a gradient concentration, a free layer on the bottom electrode layer, and a top electrode layer on the free layer.

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Patent Owner(s)

Patent OwnerAddress
UNITED MICROELECTRONICS CORPHSIN-CHU CITY

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hsieh, Chin-Yang Tainan, TW 46 103
Hsu, Chia-Chang Kaohsiung, TW 75 424
Jhang, Jing-Yin Tainan, TW 73 124
Wang, Hui-Lin Taipei, TW 132 187
Weng, Chen-Yi New Taipei, TW 75 176

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