Method of producing a bonded body of piezoelectric material substrate
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United States of America Patent
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Sep 24, 2024
Grant Date -
Sep 24, 2020
app pub date -
Jun 11, 2020
filing date -
Nov 9, 2018
priority date (Note) -
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Abstract
A silicon film is provided on a supporting substrate composed of silicon by physical vapor deposition. The silicon film is subjected to heat treatment at a temperature of 400° C. or higher and 600° C. or lower to generate an intermediate layer. The piezoelectric material substrate is bonded to the supporting substrate through a bonding layer of silicon oxide and the intermediate layer. A method of providing an acoustic wave element with a bonded body is also provided.
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