Strained gate semiconductor device having an interlayer dielectric doped with large species material

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United States of America

PATENT NO 12100767
SERIAL NO

17669317

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Abstract

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A semiconductor includes a gate stack over a substrate. The semiconductor device further includes an interlayer dielectric (ILD) at least partially enclosing the gate stack. The ILD includes a portion doped with a large species material, wherein the portion includes a first sidewall substantially perpendicular to a top-most surface of the ILD, and the portion includes a second sidewall having a positive angle with respect to the first sidewall.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTDNO 8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chang, Lan-Fang Hsinchu, TW 4 11
Jangjian, Shiu-Ko Hsinchu, TW 172 1310
Lin, Kun-Tzu Hsinchu, TW 10 28
Wu, Cheng-Ta Hsinchu, TW 116 584
Wu, Chii-Ming Hsinchu, TW 109 1282

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