Phase shift mask for extreme ultraviolet lithography and a method of manufacturing a semiconductor device using the same
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United States of America
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Sep 24, 2024
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app pub date -
May 24, 2021
filing date -
May 24, 2021
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Abstract
A phase shift mask for extreme ultraviolet lithography includes a substrate, a reflective layer on the substrate, a capping layer on the reflective layer, a buffer pattern on the capping layer, the buffer pattern including an opening exposing a surface of the capping layer, and an absorber pattern on the buffer pattern, the absorber pattern including a refractive index less than a refractive index of the buffer pattern and a thickness greater than a thickness of the buffer pattern. The buffer pattern includes a material having an etch selectivity with respect to the absorber pattern and the capping layer.
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