Semiconductor structure having deep metal line and method for forming the semiconductor structure

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United States of America Patent

PATENT NO 12094816
APP PUB NO 20230067527A1
SERIAL NO

17460859

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Abstract

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A semiconductor structure includes a substrate, a dielectric layer, a first conductive feature and a second conductive feature. The substrate includes a semiconductor device. The dielectric layer is disposed on the substrate. The first conductive feature is formed in the first dielectric layer. The second conductive feature penetrates the first conductive feature and the dielectric layer, and is electrically connected to the first conductive feature and the semiconductor device.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Hsin-Ping Hsinchu, TW 59 108
Chu, Wei-Chen Hsinchu, TW 43 138
Lee, Chia-Chen Hsinchu, TW 20 82
Liao, Yu-Chieh Hsinchu, TW 28 71
Shue, Shau-Lin Hsinchu, TW 447 7036
Su, Chia-Wei Hsinchu, TW 61 2535
Wu, Chia-Tien Hsinchu, TW 123 302

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