Methods for low resistivity and stress tungsten gap fill

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United States of America Patent

PATENT NO 12094773
APP PUB NO 20220336274A1
SERIAL NO

17857341

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Abstract

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Method for forming tungsten gap fill on a structure, including high aspect ratio structures includes depositing a tungsten liner in the structure using a physical vapor deposition (PVD) process with high ionization and an ambient gas of argon or krypton. The PVD process is performed at a temperature of approximately 20 degrees Celsius to approximately 300 degrees Celsius. The method further includes treating the structure with a nitridation process and depositing bulk fill tungsten into the structure using a chemical vapor deposition (CVD) process to form a seam suppressed boron free tungsten fill. The CVD process is performed at a temperature of approximately 300 degrees Celsius to approximately 500 degrees Celsius and at a pressure of approximately 5 Torr to approximately 300 Torr.

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Patent OwnerAddress
APPLIED MATERIALS INC3050 BOWERS AVENUE SANTA CLARA CA 95054

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cen, Xi San Jose, US 25 475
Chan, Wei Min Sunnyvale, US 82 475
Heon, Min Los Gatos, US 3 1
Kang, Ju Ik Seoul, KR 2 0
Sasaki, Nobuyuki Cupertino, US 58 258
Wang, Feihu San Jose, US 14 18
Wang, Peiqi Campbell, US 23 2
Wu, Kai Palo Alto, US 492 3966
Yu, Tom Ho Wing Campbell, US 7 3
Zhou, Chunming Fremont, US 12 34

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