Method for manufacturing semiconductor device with semiconductor capping layer
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United States of America Patent
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Sep 17, 2024
Grant Date -
Aug 31, 2023
app pub date -
May 8, 2023
filing date -
Aug 30, 2021
priority date (Note) -
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Abstract
A method for manufacturing a semiconductor device is provided. The method includes forming at least one epitaxial layer over a substrate; patterning the epitaxial layer into a semiconductor fin; depositing a conformal semiconductor capping layer over the semiconductor fin, wherein the conformal semiconductor capping layer has a first portion that is amorphous; performing a thermal treatment such that the first portion of the conformal semiconductor capping layer is converted from amorphous into crystalline; depositing a dielectric material over the conformal semiconductor capping layer; annealing the dielectric material, such that the conformal semiconductor capping layer is converted into a semiconductor-containing oxide layer; recessing the dielectric material and the semiconductor-containing oxide layer to form an isolation structure around the semiconductor fin; and forming a gate structure over the semiconductor fin and the isolation structure.
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