Method of forming nitride semiconductor film
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United States of America Patent
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Sep 17, 2024
Grant Date -
Jul 15, 2021
app pub date -
Mar 31, 2021
filing date -
Oct 9, 2018
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Abstract
The method of forming a nitride semiconductor film includes intermittently sputtering a target of gallium nitride inside a vacuum chamber containing nitrogen and argon, and depositing sputtered particles of the gallium nitride that are scattered from the target inside the vacuum chamber, on a substrate having a temperature of 560 degrees C. or higher and 650 degrees C. or lower. A ratio of a flow rate of the nitrogen to a sum of the flow rate of the nitrogen and a flow rate of the argon supplied to the vacuum chamber is 6% or higher and 18% or lower.
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