Etch apparatus for compensating shifted overlayers

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United States of America

PATENT NO 12094691
SERIAL NO

17369838

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Abstract

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The current disclosure includes a plasma etching system that includes a movable plasma source and a moveable wafer stage. A relative position between the movable plasma source and the movable wafer stage can be varied to set up an angle along which plasma particles of the plasma hits a wafer positioned on the wafer stage.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chang, Chun-Yen Hsinchu, TW 76 808
Chang, Shih-Ming Hsinchu, TW 192 1880
Chang, Ya-Hui Hsinchu, TW 26 81
Shen, Yu-Tien Hsinchu, TW 40 65
Yang, Chih-Kai Hsinchu, TW 112 607

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