Mask topology optimization method and system for surface plasmon near-field photolithography

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United States of America Patent

PATENT NO 12092960
APP PUB NO 20240264535A1
SERIAL NO

18575532

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A mask topology optimization method for surface plasmon near-field photolithography, including: acquiring first mask data and performing fuzzy processing and projection processing on same to obtain second mask data; performing forward calculation according to the second mask data and a preset surface plasmon near-field photolithography condition to obtain imaging data and forward field data; calculating an imaging error between the imaging data and expected imaging data; performing adjoint calculation on the second mask data to obtain adjoint field data; calculating a gradient matrix of the imaging error relative to the first mask data according to the forward field data and the adjoint field data; and updating the first mask data according to the gradient matrix, repeating the steps for iteration calculation until the optimized mask data is obtained, and outputting a final mask pattern.

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THE INSTITUTE OF OPTICS AND ELECTRONICS THE CHINESE ACADEMY OF SCIENCESP O BOX 350 SHUANGLIU CHENGDU SICHUAN 610209

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Gao, Ping Sichuan, CN 104 740
Li, Xiong Sichuan, CN 115 724
Luo, Xiangang Sichuan, CN 119 201
Ma, Xiaoliang Sichuan, CN 31 193
Pu, Mingbo Sichuan, CN 14 17
Sang, Di Sichuan, CN 2 13
Xu, Mingfeng Sichuan, CN 10 20
Zhao, Zeyu Sichuan, CN 16 28

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