Method for epitaxially depositing a material on a substrate by flowing a process gas across the substrate from an upper gas inlet to an upper gas outlet and flowing a purge gas from a lower gas inlet to a lower gas outlet

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United States of America Patent

PATENT NO 12091749
APP PUB NO 20220364229A1
SERIAL NO

17317565

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Abstract

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Embodiments described herein include processes and apparatuses relate to epitaxial deposition. A method for epitaxially depositing a material is provided and includes positioning a substrate on a substrate support surface of a susceptor within a process volume of a chamber body, where the process volume contains upper and lower chamber regions. The method includes flowing a process gas containing one or more chemical precursors from an upper gas inlet on a first side of the chamber body, across the substrate, and to an upper gas outlet on a second side of the chamber body, flowing a purge gas from a lower gas inlet on the first side of the chamber body, across the lower surface of the susceptor, and to a lower gas outlet on the second side of the chamber body, and maintaining a pressure of the lower chamber region greater than a pressure of the upper chamber region.

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Patent Owner(s)

Patent OwnerAddress
APPLIED MATERIALS INC3050 BOWERS AVENUE SANTA CLARA CA 95054

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bauer, Matthias Sunnyvale, US 81 5594
Ishikawa, Tetsuya San Jose, US 358 14699
Moradian, Ala Sunnyvale, US 89 154
Reimer, Peter Santa Clara, US 92 1316
Rice, Michael R Pleasanton, US 176 3831
Sanchez, Errol Antonio C Santa Clara, US 110 6300
Shah, Kartik Bhupendra Saratoga, US 15 19
Shull, Marc San Jose, US 6 0
Srinivasan, Swaminathan T Pleasanton, US 29 135
Subbanna, Manjunath Bangalore, IN 14 9

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