Method of forming a semiconductor module

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United States of America Patent

PATENT NO 12087740
APP PUB NO 20240047431A1
SERIAL NO

18381929

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Abstract

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A method of forming a semiconductor module comprises forming a laminate structure having an electrically insulating core layer with opposing first and second sides, a first redistribution layer arranged on the first side and a second redistribution layer arranged on the second side. First and second transistor devices are coupled to form a half-bridge circuit. Bots transistor devices have a first side at which a cell field is arranged and an opposing second side. A control chip has a first side with contact pads. The transistor devices and control chip are arranged laterally adjacent one another and embedded in the core layer. The first side of the control chip and one transistor device and the second side of the other transistor device face towards the first redistribution layer on the first side of the core layer.

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Patent Owner(s)

Patent OwnerAddress
INFINEON TECHNOLOGIES AUSTRIA AG2 SIEMENS STREET VILLACH AUSTRIA VILLACH CARINTHIA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hoeglauer, Josef Heimstetten, DE 95 732
Kessler, Angela Sinzing, DE 65 382
Noebauer, Gerhard Villach, AT 38 125

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