Hardened interlayer dielectric layer

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United States of America Patent

PATENT NO 12087692
APP PUB NO 20190096820A1
SERIAL NO

15940145

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Abstract

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The present disclosure relates to a semiconductor device and a manufacturing method thereof, and more particularly to an interlayer dielectric (ILD) layer in a semiconductor device. In one example, the ILD layer is over a substrate and includes a dielectric with a dielectric constant of less than about 3.3 and a hardness of at least about 3 GPa. The semiconductor device also includes an interconnect formed in the ILD layer.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING CO LTDHSIN-CHU 300-77

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Huang, Greg Hsinchu, TW 2 2
Liou, Joung-Wei Hsinchu, TW 66 543

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