Semiconductor device

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United States of America Patent

PATENT NO 12087666
APP PUB NO 20230112835A1
SERIAL NO

18077168

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Abstract

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A semiconductor device includes a substrate, an isolation structure, a first gate structure, a second gate structure, a first slot contact structure, a first gate contact structure, and a second gate contact structure. The substrate includes a first active region and a second active region elongated in a first direction respectively. The first gate structure, the second gate structure, and the first slot contact structure are continuously elongated in a second direction respectively. The first gate contact structure and the second gate contact structure are disposed at two opposite sides of the first slot contact structure in the first direction respectively.

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Patent Owner(s)

Patent OwnerAddress
UNITED MICROELECTRONICS CORPNO 3 LI-HSIN ROAD 2 SCIENCE-BASED INDUSTRIAL PARK HSIN-CHU CITY

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Yu-Ruei New Taipei, TW 32 27
Chu, Chung-Liang Kaohsiung, TW 29 43

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