Method of manufacturing EUV photo masks

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United States of America Patent

PATENT NO 12085843
APP PUB NO 20230367193A1
SERIAL NO

18226151

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Abstract

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In a method of manufacturing a photo mask, an etching mask layer having circuit patterns is formed over a target layer of the photo mask to be etched. The photo mask includes a backside conductive layer. The target layer is etched by plasma etching, while preventing active species of plasma from attacking the backside conductive layer.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTDHSINCHU

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hsu, Pei-Cheng Hsinchu, TW 111 530
Lee, Hsin-Chang Hsinchu, TW 203 1090
Lien, Ta-Cheng Hsinchu, TW 104 198
Wang, Tzu Yi Hsinchu, TW 11 14

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