Dual magnetic tunnel junction (DMTJ) stack design

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United States of America Patent

PATENT NO 12082509
APP PUB NO 20210020830A1
SERIAL NO

17063392

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Abstract

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A dual magnetic tunnel junction (DMTJ) is disclosed with a PL1/TB1/free layer/TB2/PL2/capping layer configuration wherein a first tunnel barrier (TB1) has a substantially lower resistance x area (RA1) product than RA2 for an overlying second tunnel barrier (TB2) to provide an acceptable net magnetoresistive ratio (DRR). Moreover, magnetizations in first and second pinned layers, PL1 and PL2, respectively, are aligned antiparallel to enable a lower critical switching current than when in a parallel alignment. An oxide capping layer having a RACAP is formed on PL2 to provide higher PL2 stability. The condition RA12 and RACAP2 is achieved when TB1 and the oxide capping layer have one or both of a smaller thickness and a lower oxidation state than TB2, are comprised of conductive (metal) channels in a metal oxide or metal oxynitride matrix, or are comprised of a doped metal oxide or doped metal oxynitride layer.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTDHSINCHU

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Jan, Guenole San Jose, US 117 2580
Patel, Sahil Fremont, US 48 248
Sundar, Vignesh Fremont, US 45 204
Thomas, Luc San Jose, US 43 714
Tong, Ru-Ying Los Gatos, US 183 4860
Wang, Yu-Jen San Jose, US 264 2926

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