Semiconductor device
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United States of America Patent
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Sep 3, 2024
Grant Date -
Sep 22, 2022
app pub date -
Aug 31, 2021
filing date -
Mar 18, 2021
priority date (Note) -
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status (Latency Note)
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Abstract
A semiconductor device includes; an active pattern on a substrate, gate structures in which each gate structure includes a gate electrode intersecting the active pattern and a gate capping pattern on the gate electrode, a source/drain pattern disposed on the active pattern between adjacent gate structures, a lower active contact connected to the source/drain pattern, an etching stop film extending along an upper surface of the lower active contact without contacting an upper surface of the gate capping pattern, and an upper active contact connected to the lower active contact, wherein a bottom surface of the upper active contact is lower than the upper surface of the gate capping pattern.
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