Semiconductor device with fin structures

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United States of America Patent

PATENT NO 12080602
APP PUB NO 20230317522A1
SERIAL NO

18331326

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Abstract

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A semiconductor device structure is provided. The semiconductor device structure includes a substrate and a first fin structure and a second fin structure over the substrate. A top surface of the first fin structure and a top surface of the second fin structure are at different height levels. The semiconductor device structure also includes a first semiconductor element on the first fin structure and a second semiconductor element on the second fin structure. The first semiconductor element is wider than the second semiconductor element, and the first semiconductor element is closer to the substrate than the second semiconductor element.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTDHSINCHU

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Keng, Wen-Chun Hsinchu County, TW 23 28
Lin, Yu-Kuan Taipei, TW 95 558
Wang, Ping-Wei Hsinchu, TW 186 1402
Yang, Chang-Ta Hsinchu, TW 44 622

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