Rugged, single crystal wide-band-gap-material scanning-tunneling-microscopy/lithography tips

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United States of America Patent

PATENT NO 12078654
APP PUB NO 20210263069A1
SERIAL NO

17237697

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Abstract

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Provided is a composite metal-wide-bandgap semiconductor tip for scanning tunneling microscopy and/or scanning tunneling lithography, a method of forming, and a method for using the composite metal-wide-bandgap semiconductor tip.

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Patent Owner(s)

Patent OwnerAddress
UNM RAINFOREST INNOVATIONSALBUQUERQUE NM

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ballard, Joshua B Albuquerque, US 4 8
Behzadirad, Mahmoud Albuquerque, US 7 2
Brueck, Steven R J Albuquerque, US 103 1830
Busani, Tito Albuquerque, US 10 2
Feezell, Daniel Albuquerque, US 22 110
Randall, John Albuquerque, US 17 159
Rishinaramangalam, Ashwin Krishnan Albuquerque, US 3 0

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