Chemical vapor deposition furnace with a cleaning gas system to provide a cleaning gas

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United States of America Patent

PATENT NO 12077854
APP PUB NO 20230008131A1
SERIAL NO

17810773

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Abstract

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A chemical vapor deposition furnace for depositing silicon nitride films is disclosed. The furnace includes a process chamber elongated in a substantially vertical direction and a wafer boat for supporting a plurality of wafers in the process chamber. A process gas injector inside the process chamber is provided with vertically spaced gas injection holes to provide gas introduced at a feed end in an interior of the process gas injector to the process chamber. A valve system connected to the feed end of the process gas injector is being constructed and arranged to connect a source of a silicon precursor and a nitrogen precursor to the feed end for depositing silicon nitride layers. The valve system may connect the feed end of the process gas injector to a cleaning gas system to provide a cleaning gas to remove silicon nitride from the process gas injector and/or the process chamber.

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Patent Owner(s)

Patent OwnerAddress
ASM IP HOLDING B VHOLLAND ALMERE ALMERE FLEVOLAND

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Jdira, Lucian Nieuw Vennep, NL 17 1900
Jongbloed, Bert Oud-Heverlee, BE 58 6646
Oosterlaken, Theodorus G M Oudewater, NL 27 450
Pierreux, Dieter Pepingen, BE 71 7645
Terhorst, Herbert Amersfoort, NL 46 6711

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