Silicon carbide substrate

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United States of America Patent

PATENT NO 12071708
APP PUB NO 20220220638A1
SERIAL NO

17611139

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Abstract

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A silicon carbide substrate in accordance with the present disclosure includes a main surface. The silicon carbide substrate has a maximum diameter of 150 mm or more. In the main surface, a total area of a region in which a concentration of each of sodium, aluminum, potassium, calcium, titanium, iron, copper, and zinc is less than 5×1010 atoms/cm2 is more than or equal to 95% of an area of the main surface.

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Patent Owner(s)

Patent OwnerAddress
SUMITOMO ELECTRIC INDUSTRIES LTDOSAKA JAPAN OSAKA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Honke, Tsubasa Osaka, JP 29 26
Okita, Kyoko Osaka, JP 63 152

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