High electron mobility transistor

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12068408
SERIAL NO

17369479

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Abstract

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In an embodiment, a HEMT is formed to have a main transistor having a main active area and a sense transistor having a sense active area. An embodiment may include that the main active area is isolated from the sense active area.

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Patent Owner(s)

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THE GOVERNING COUNCIL OF THE UNIVERSITY OF TORONTOCANADA ONTARIO ONTARIO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
De, Vleeschouwer Herbert Zulte, BE 7 9
Moens, Peter Erwetegem, BE 74 525
Roig-Guitart, Jaume Oudenaarde, BE 30 103
Trescases, Olivier Toronto, CA 30 202
Zaman, Mohammad Shawkat North York, CA 1 1

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