Semiconductor device

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 12068366
APP PUB NO 20220320268A1
SERIAL NO

17587753

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Abstract

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A semiconductor device includes n-type drift layer, n-type current spreading layer having higher impurity concentration than the drift layer, p-type base region provided on top surface, p-type gate-bottom protection region located in the current spreading layer, having first bottom edge portion formed of curved surface, p-type base-bottom embedded region in contact with bottom surface of the base region, having second bottom edge portion formed of curved surface on side surface facing the gate-bottom protection region, being separated from the gate-bottom protection region, and insulated gate electrode structure provided in trench penetrating through the base region to reach the gate-bottom protection region. Bottom surface of the base-bottom embedded region is deeper than bottom surface of the gate-bottom protection region, and minimum value of curvature radius of the first bottom edge portion is larger than minimum value of curvature radius of the second bottom edge portion.

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Patent Owner(s)

Patent OwnerAddress
FUJI ELECTRIC CO LTDKAWASAKI TANABE XINTIAN KAWASAKI JAPAN 1 NO 1 KAWASAKI-SHI KANAGAWA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Moriya, Tomohiro Matsumoto, JP 24 82

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