Semiconductor substrate
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United States of America Patent
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Aug 20, 2024
Grant Date -
Mar 7, 2024
app pub date -
Apr 27, 2023
filing date -
Feb 28, 2018
priority date (Note) -
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Abstract
A method for manufacturing a semiconductor device includes the steps of forming a fixing layer, coupling a third substrate different from the first substrate and the second substrate to the fixing layer, separating the semiconductor thin film layer from the first substrate by moving the third substrate away from the base material substrate with the third substrate coupled to the coupling region, and bonding the semiconductor thin film layer to the second substrate after separation from the base material substrate, wherein the forming the fixing layer forms the fixing layer having a thickness such that a crack is generated between the fixing layer formed on the first substrate and the fixing layer formed on a side surface of the semiconductor thin film layer by a force for moving the third substrate.
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